Room temperature negative differential resistance of a monolayer molecular rotor device
نویسندگان
چکیده
منابع مشابه
Room temperature negative differential resistance of a monolayer molecular rotor device
molecular rotor device Mei Xue, Sanaz Kabehie, Adam Z. Stieg, Ekaterina Tkatchouk, Diego Benitez, Rachel M. Stephenson, William A. Goddard, Jeffrey I. Zink, and Kang L. Wang Department of Electrical Engineering, Device Research Laboratory, University of California, Los Angeles, California 90095, USA Department of Chemistry and Biochemistry, University of California, Los Angeles, California 9009...
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Irena Kratochvilova,* Milan Kocirik, Adriana Zambova, Jeremiah Mbindyo, Thomas E. Mallouk and Theresa S. Mayer Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Praha 8, Czech Republic. E-mail: [email protected] J. Heyrovsky Institute of Physical Chemistry, Academy of Sciences of the Czech Republic, Dolejskova 3, 18223 Praha 8, Czech Republic Department of Electr...
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Molecular devices are reported utilizing active self-assembled monolayers containing the nitroamine @28-amino-4,48-di~ethynylphenyl!-58-nitro-1-benzenethiolate# or the nitro compound @4,48-di~ethynylphenyl!-28-nitro-1-benzenethiolate# as the active components. Both of these compounds have active redox centers. Current–voltage measurements of the devices exhibited negative differential resistanc...
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GaN/AlN resonant tunneling diodes RTD were grown by metal-organic chemical vapor deposition MOCVD and negative differential resistance with peak-to-valley ratios as high as 2.15 at room temperature was demonstrated. Effect of material quality on RTDs’ performance was investigated by growing RTD structures on AlN, GaN, and lateral epitaxial overgrowth GaN templates. Our results reveal that negat...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2009
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.3222861